Polybithiophene (pbT) thin films have been electrochemically deposited on n-TiO2 prepared by electrochemical oxidation of titanium. The rectifying behaviour of this novel inorganic semiconductor/conducting polymer interface is demonstrated by cyclic voltammetry experiments, interpreted in the framework of Gerischer's theory on 'semiconductor/redox-electrolyte' interfaces treated as Schottky barriers. Moreover, experimental evidence of a photovoltaic effect is given by a photoelectrochemical investigation carried out by illuminating the pbT layer with photons of appropriate frequency.

Development and electroanalytical investigation of a novel rectifying semiconductor/polymer interface

GUERRIERI, Antonio;
1992

Abstract

Polybithiophene (pbT) thin films have been electrochemically deposited on n-TiO2 prepared by electrochemical oxidation of titanium. The rectifying behaviour of this novel inorganic semiconductor/conducting polymer interface is demonstrated by cyclic voltammetry experiments, interpreted in the framework of Gerischer's theory on 'semiconductor/redox-electrolyte' interfaces treated as Schottky barriers. Moreover, experimental evidence of a photovoltaic effect is given by a photoelectrochemical investigation carried out by illuminating the pbT layer with photons of appropriate frequency.
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11563/2702
 Attenzione

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo

Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 4
  • ???jsp.display-item.citation.isi??? 4
social impact